Thin film transistor substrate and fabricating method thereof
AssigneeLG Display Co., Ltd.
InventorHyun-Ho Kim
Life of this patent
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Abstract
The present invention relates to a thin film transistor substrate and a fabricating method thereof. The thin film transistor according to one embodiment of the present invention comprises: a gate wire and a data wire formed to cross each other on an insulating substrate and define a pixel area; a thin film transistor formed on the intersection of the gate wire and the data wire; an inorganic insulating layer covering the thin film transistor and having a surface that a prominence and depression pattern formed on; and a reflective layer provided on the prominence and depression pattern. Thus, the present invention provides a thin film transistor substrate and a fabricating method thereof, which reduce the time required in the process and enhance the productivity.
Claims15
A thin film transistor substrate comprising:
- a gate wire and a data wire formed to cross each other on an insulating substrate and define a pixel area;
- a thin film transistor formed on the intersection of the gate wire and the data wire;
- an inorganic insulating layer covering the thin film transistor and having a surface that a prominence and depression pattern formed on;
- and
- a reflective layer provided on the prominence and depression pattern.
A fabricating method for a thin film transistor substrate, comprising:
- forming a gate wire on an insulating substrate;
- forming a data wire crossed with the gate wire and defining a pixel area;
- forming a thin film transistor on the intersection of the gate wire and the data wire;
- forming an inorganic insulating layer covering the thin film transistor;
- forming a prominence and depression pattern on the surface of the inorganic insulating layer;
- and
- forming a reflective layer on the prominence and depression pattern.
Dependencies are inferred from the claim text.