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US 2008/0157083 A1Published application
Transistor, fabricating method thereof and flat panel display therewith
AssigneeSamsung SDI Co., Ltd.
InventorsBYOUNGKEON PARK, TAEHOON YANG, JINWOOK SEO, SEIHWAN JUNG, KIYONG LEE, MAXIM LISACHENKO
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Abstract
A transistor includes a substrate, an active region including a source region, a channel region, and a drain region which are crystallized using an SGS crystallization method and are formed on the substrate so that a grain size of a first annealed portion and a second annealed portion are different from each other, a gate insulating layer formed on the active region, and a gate electrode formed on the gate insulating layer.
Claims27
A transistor, comprising:
- a substrate;
- an active region including a source region, a channel region, and a drain region, which are crystallized using an SGS (Super Grain Silicon) crystallization method and are formed on the substrate so that a grain size of a first annealed portion and a second annealed portion are different from each other;
- a gate insulating layer formed on the active region;
- and
- a gate electrode formed on the gate insulating layer.
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A fabricating method of the transistor, comprising:
- preparing a substrate,
- forming an amorphous silicon layer on the substrate;
- forming a capping layer on the amorphous silicon layer;
- forming a metal catalyst layer on the capping layer;
- performing a first annealing process to crystallize amorphous silicon of the amorphous silicon layer into first annealed polycrystalline silicon using an SGS (Super Grain Silicon) crystallization method wherein metal catalysts of the metal catalyst layer diffuse as far as the amorphous silicon by penetrating through the capping layer;
- removing the metal catalyst layer and the capping layer;
- and
- performing a second annealing process wherein the metal catalyst crystallizes the amorphous silicon into second annealed polycrystalline silicon using the SGS crystallization method to form a polycrystalline silicon layer.
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Dependencies are inferred from the claim text.