Method to measure ion beam angle
AssigneeTexas Instruments Incorporated
InventorJames David Bernstein
Life of this patent
Estimating the term…
Abstract
A device and method for measuring ion beam angle with respect to a substrate is disclosed. The method includes forming a plurality of shadowing structures extending substantially perpendicular from an upper surface of the substrate, directing an ion beam toward the substrate, the plurality of shadowing structures interrupting an incident angle of the ion beam to define implanted and non-implanted portions of the substrate. The method further includes measuring the dose of implanted species within the substrate, determining an implanted surface area as a function of measuring the dose of implant, determining non-implanted surface area based on the implanted surface area, and obtaining the ion beam angle as a function of the non-implanted surface area.
Claims19
A method for measuring ion beam angle with respect to a substrate comprising:
- forming a plurality of shadowing structures extending substantially perpendicular from an upper surface of the substrate;
- directing an ion beam toward the substrate, the plurality of shadowing structures interrupting an incident angle of the ion beam to define implanted and non-implanted portions of the substrate;
- measuring the dose of implanted species within the substrate;
- determining an implanted surface area as a function of measuring the dose of implant;
- determining non-implanted surface area based on the implanted surface area;
- and
- obtaining the ion beam angle as a function of the non-implanted surface area.
A device for measuring an ion beam angle with respect to a substrate, the device comprising:
- a plurality of shadowing structures formed on a surface of the substrate, the shadowing structures interrupting an incident angle of the ion beam;
- a plurality of distinct regions each defined by a series of oriented shadowing structures;
- a reference region free of shadowing structures;
- at least a portion of the substrate defined by an implant dose of the ion beam and a remaining portion of the substrate free of an implant dose according to shadowing by the plurality of shadowing structures;
- an implanted surface area determined as a function of a detected implant dose and a non-implanted surface area defined by a difference between a total surface area and the implanted surface area;
- and
- an ion beam angle determined as a function of the non-implanted surface area.
Dependencies are inferred from the claim text.