Thin film transistor device, image display device and manufacturing method thereof

An image display device comprising a display part comprising a plurality of pixels and a peripheral integrated circuit part configured with a plurality of circuit blocks arranged on the periphery of the display part, wherein:

• a pixel circuitry of said display part is configured comprising an organic semiconductor TFT device;
• said peripheral integrated circuit part is configured comprising at least one of a Si transistor device and a poly Si-TFT device;
• said circuitry and at least one of said Si transistor device and said poly Si-TFT device are provided on the same substrate;
• and
• between an electrode of said organic semiconductor TFT device and an electrode of at least one of said Si transistor device and said poly Si-TFT device it is connected by a wire layer provided on the substrate.

A manufacturing method of a thin film transistor device comprising a matrix array part comprising a plurality of circuit blocks and a peripheral integrated circuit comprising a plurality of circuit blocks arranged on the periphery of the array part, wherein a circuit of said matrix array part is formed comprising an organic semiconductor TFT device, said peripheral integrated circuit is formed comprising a Si transistor device or a poly Si-TFT device, comprising the steps of;

• (a) after forming at least one of said Si transistor device and said poly Si-TFT device on a first support substrate and forming a peripheral integrated circuit part comprising a plurality of circuit blocks arranged on the periphery of said array part, providing at least one of said Si transistor device and said poly Si-TFT device on a second support substrate after making the thickness of said first support substrate thin or removing said first support substrate, or after forming at least one of said Si transistor device and said poly Si-TFT device on said first support substrate and providing the second support substrate on the opposite side of said first support substrate side of at least one of said Si transistor device and said poly Si-TFT device, making the thickness of the surface of the side on which said device is not formed of said first support substrate or removing said first support substrate;
• (b) forming a matrix array part by forming an organic semiconductor TFT and a wire layer on said second support substrate by printing after said (a) step;
• and
• (c) connecting between an electrode of said organic semiconductor TFT device and an electrode of at least one of said Si transistor device and said poly Si-TFT device by the wire layer formed on said second support substrate.