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US 2008/0157061 A1Published application
Field effect transistor array using single wall carbon nano-tubes
AssigneeUSA as represented by the Secretary of the Army
InventorsShashi P. Karna, Govind Mallick
Life of this patent
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Abstract
A field effect transistor array comprising a substrate and a plurality of single wall carbon nano-tubes disposed on a surface of the substrate. A plurality of electrodes are disposed over the nano-tubes such that the conductive strips are spaced-apart from each other. These electrodes form the contact point for the drain and source of the field effect transistor, while one or more of the nano-carbon tubes form the channel between the source and the drain.
Claims13
A field effect transistor comprising
- a substrate,
- a plurality of single wall carbon nano-tubes disposed on a surface of said substrate,
- a plurality of electrodes disposed over said nano carbon tubes such that said electrodes are spaced apart from each other, said strips forming at least one drain and at least one source contact for the transistor.
A method of fabricating a field effect transistor comprising the steps of
- forming an electrical insulating layer on a semiconductor substrate,
- growing single wall carbon nano tubes on said insulating layer,
- depositing a plurality of spaced apart electrodes on said nano tubes and said insulating layer, said electrodes forming contacts for a drain and a source of said transistor.
Dependencies are inferred from the claim text.