Nanostructure Having a Nitride-Based Quantum Well and Light Emitting Diode Employing the Same

A light emitting diode, comprising:

• a substrate;
• an array of nanostructures, each of the nanostructures includes a core nanorod formed substantially perpendicularly to the substrate and having a first nanorod of a first conductivity type, a (AlxInyGa1-x-y)N (where, 0≦x<1, 0≦y≦1 and 0≦x+y≦1) quantum well, and a second nanorod of a second conductivity type, all of them being joined in a longitudinal direction, and a nano shell formed of a material with a bandgap greater than that of the (AlxInyGa1-x-y)N quantum well to surround at least the (AlxInyGa1-x-y)N quantum well of the core nanorod;
• and
• a transparent electrode connected in common to the second nanorods.

A method of fabricating a light emitting diode, comprising the steps of:

• forming an array of core nanorods perpendicularly to a substrate, each of the core nanorods having a first nanorod of a first conductivity type, an (AlxInyGa1-x-y)N (where, 0≦x<1, 0≦y≦1 and 0≦x+y≦1) quantum well and a second nanorod of a second conductivity type, all of them being joined in a longitudinal direction;
• forming first nano shells out of a material with a bandgap greater than that of the (AlxInyGa1-x-y)N quantum well so as to cover the core nanorods;
• forming nano shells by etching tips of the first nano shells to expose tips of the second nanorods;
• and
• forming a transparent electrode connected in common to the exposed tips of the second nanorods.