Back to results
US 2008/0157055 A1Published application
Resistive random access memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsJung-hyun Lee, Hyung-jin Bae, Sang-jun Choi
Life of this patent
Estimating the term…
Abstract
Provided is a resistive random access memory (RRAM) device having a switching device and a storage node connected to the switching device, the storage node including a first electrode formed of a metal compound, the metal compound including metal with no more than a divalence and a metal compound having anions, a solid electrolyte layer formed on the first electrode, and a second electrode formed on the solid electrolyte layer.
Claims12
A resistive random access memory (RRAM) device, comprising a switching device and a storage node that is connected to the switching device,
- wherein the storage node comprises:
- a first electrode formed of a compound, the compound including metal with no more than a divalence and a metal compound having anions;
- a solid electrolyte layer formed on the first electrode;
- and
- a second electrode formed on the solid electrolyte layer.
2 more elements
Dependencies are inferred from the claim text.