Back to results
US 2008/0157052 A1Published application
Resistance variable memory with temperature tolerant materials
AssigneeMicron Technology, Inc.
InventorKristy A. Campbell
Life of this patent
Estimating the term…
Abstract
A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichometric formula of about Sb2Se3, and a metal-chalcogenide layer and methods of forming such a memory device.
Claims18
1-7. (canceled)
A memory device comprising:
- a first electrode;
- a second electrode;
- a Sb2Se3 glass layer between said first electrode and said second electrode;
- a metal-chalcogenide layer between said Sb2Se3 glass layer and said second electrode.
- a first chalcogenide glass layer between said metal-chalcogenide layer and said second electrode;
- a metal-containing layer between said first chalcogenide glass layer and said second electrode;
- and
- a second chalcogenide glass layer between said metal-containing layer and said second electrode.
5 more elements
10-16. (canceled)
A memory device, comprising:
- a substrate;
- a conductive address line over said substrate;
- a first electrode over said conductive address line;
- a Sb2Se3 glass layer over said first electrode;
- a metal-chalcogenide layer over said Sb2Se3 glass layer;
- a first chalcogenide glass layer over said metal-chalcogenide layer;
- a metal layer over said first chalcogenide glass layer;
- a second chalcogenide glass layer over said metal layer;
- and
- a second electrode over said second chalcogenide glass layer.
7 more elements
30-67. (canceled)
Dependencies are inferred from the claim text.