Nonvolatile Memory Cell with Concentric Phase Change Material Formed Around a Pillar Arrangement
AssigneeInternational Business Machines Corporation
InventorsChung Hon Lam, Alejandro Gabriel Schrott
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Abstract
A memory cell comprises a first feature and a second feature. The second feature comprises a dielectric material and defines an opening at least partially overlying the first feature. A third feature is formed on the first feature and partially fills the opening in the second feature. What is more, a phase change material at least fills a volume between the second feature and the third feature. At least a portion of the phase change material is operative to switch between lower and higher electrical resistance states in response to an application of a switching signal to the memory cell.
Claims20
A memory cell comprising:
- a first feature;
- a second feature, the second feature comprising a dielectric material and defining an opening at least partially overlying the first feature;
- a third feature, the third feature formed on the first feature and partially filling the opening in the second feature;
- and
- phase change material, the phase change material at least filling a volume between the second feature and the third feature;
- wherein at least a portion of the phase change material is operative to switch between lower and higher electrical resistance states in response to an application of a switching signal to the memory cell.
An integrated circuit comprising one or memory cells, at least one of the memory cells comprising:
- a first feature;
- a second feature, the second feature comprising a dielectric material and defining an opening at least partially overlying the first feature;
- a third feature, the third feature formed on the first feature and partially filling the opening in the second feature;
- and
- phase change material, the phase change material at least filling a volume between the second feature and the third feature;
- wherein at least a portion of the phase change material is operative to switch between lower and higher electrical resistance states in response to an application of a switching signal to the memory cell.
A method of forming a memory cell, the method comprising the steps of:
- forming a first feature;
- forming a second feature, the second feature comprising a dielectric material and defining an opening at least partially overlying the first feature;
- forming a third feature, the third feature formed on the first feature and partially filling the opening in the second feature;
- and
- forming phase change material, the phase change material at least filling a volume between the second feature and the third feature;
- wherein at least a portion of the phase change material is operative to switch between lower and higher electrical resistance states in response to an application of a switching signal to the memory cell.
Dependencies are inferred from the claim text.