Phase-change memory and fabrication method thereof
AssigneesIndustrial Technology Research Institute, Powerchip Semiconductor Corp., Nanya Technology Corporation, ProMOS Technologies Inc., Winbond Electronics Corp.
InventorFrederick T Chen
Life of this patent
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Abstract
A phase-change memory and fabrication method thereof. The phase-change memory comprises a transistor, and a phase-change material layer. In particular, the phase-change material layer is directly in contact with one electrical terminal of the transistor. Particularly, the transistor can be a field effect transistor or a bipolar junction transistor.
Claims25
A phase-change memory element, comprising:
- a transistor;
- and
- a phase-change material layer directly in contact with one terminal of the transistor.
A method of fabricating a phase-change memory element, comprising:
- forming a patterned hardmask layer with first width on a phase-change material layer;
- etching the phase-change material layer using the patterned hardmask layer with first width as mask;
- trimming the patterned hardmask layer until a second width of the patterned hardmask layer is achieved, obtaining a tapered profile hardmask layer/phase-change material layer stack with a bottom phase-change material pedestal;
- and
- etching the tapered profile hardmask layer/phase-change material layer stack using the patterned hardmask layer with the second width as mask, obtaining a straight profile hardmask layer/phase-change material layer stack with the bottom phase-change material pedestal.
A method of fabricating a phase-change memory element, comprising:
- providing a substrate with a transistor;
- forming a dielectric layer on the substrate;
- forming a trench passing through the dielectric layer to expose one terminal of the transistor;
- forming a phase-change material layer on the dielectric layer that completely fills the trench;
- forming a conductive layer on the phase-change material layer;
- forming a patterned hardmask layer with first width on the conductive layer, wherein the patterned hardmask layer is perpendicular to the trench;
- etching the phase-change material layer and the conductive layer using the patterned hardmask layer with first width as mask;
- trimming the patterned hardmask layer until a second width of the patterned hardmask layer is achieved, obtaining a tapered profile hardmask layer/conductive layer/phase-change material layer stack with a bottom phase-change material pedestal;
- and
- etching the tapered profile hardmask layer/conductive layer/phase-change material layer stack using the patterned hardmask layer with the second width as mask, obtaining a straight profile hardmask layer/conductive layer/phase-change material layer stack with the bottom phase-change material pedestal.
Dependencies are inferred from the claim text.