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US 2008/0156970 A1Published application
Image sensor and fabricating method thereof
AssigneeDongbu HiTek Co., Ltd.
InventorsChang Hun Han, Hea Soo Chung
Life of this patent
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Abstract
The present invention provides an image sensor, and methods of manufacturing the same, that includes a color filter layer on a semiconductor substrate, and a microlens array on the color filter layer, in which the microlens includes a transparent conductive layer.
Claims20
An image sensor comprising:
- a color filter layer on a semiconductor substrate;
- and
- a microlens array on the color filter layer, in which the microlens includes a transparent conductive layer.
A method for fabricating an image sensor, the method comprising:
- forming a protective layer on a lower structure, including a photodiode and an interconnection;
- forming a color filter layer on the protective layer;
- forming a transparent conductive layer on the color filter layer;
- forming a photoresist film on the transparent conductive layer;
- forming a sacrificial microlens array by pattering the photoresist film;
- and
- etching the sacrificial microlens and the transparent conductive layer to form a microlens array in the transparent conductive layer.
4 more elements
A method for fabricating an image sensor, the method comprising:
- forming a protective layer on a lower structure including a photodiode and an interconnection;
- forming a color filter layer on the protective layer;
- forming a planarization layer on the color filter layer;
- forming a transparent conductive layer on the planarization layer;
- forming a photoresist film on the transparent conductive layer;
- forming a sacrificial microlens array by patterning the photoresist film;
- and
- etching the sacrificial microlens and the transparent conductive layer to form a microlens array in the transparent conductive layer.
5 more elements
Dependencies are inferred from the claim text.