Method and apparatus for wafer edge processing
OwnerYunsang Kim, Jack Chen +2inventors
InventorsYunsang Kim, Jack Chen, Grace Fang, Andrew Bailey
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Abstract
Methods and apparatus for remedying arc-related damage to the substrate during plasma bevel etching. A plasma shield is disposed above the substrate to prevent plasma, which is generated in between two annular grounded plates, from reaching the exposed metallization on the substrate. Additionally or alternatively, a carbon-free fluorinated process source gas may be employed and/or the RF bias power may be ramped up gradually during plasma generation to alleviate arc-related damage during bevel etching. Also additionally or alternatively, helium and/or hydrogen may be added to the process source gas to alleviate arc-related damage during bevel etching.
Claims23
A plasma processing system having a plasma processing chamber configured for processing a substrate, comprising:
- a RF power source;
- a lower electrode configured to support said substrate during said processing, said lower electrode receiving at least an RF signal from said RF power source for generating a plasma within said plasma processing chamber during said processing;
- a first annular grounded electrode disposed above said substrate;
- a second annular grounded electrode disposed below said substrate, said first annular grounded electrode and said second annular grounded electrode being disposed such that a circumferential edge of said substrate is exposed in a direct line-of-sight manner to at least a portion of said first annular grounded electrode and at least a portion of said second annular grounded electrode;
- and
- a plasma shield disposed above at least a portion of said substrate, said plasma shield being configured to prevent said plasma from being formed in a region between said plasma shield and said portion of said substrate during said processing.
A method for processing a substrate in a plasma processing chamber, said substrate being disposed on a lower electrode that forms a chuck during said processing, comprising:
- providing a first annular grounded electrode disposed above said substrate;
- providing a second annular grounded electrode disposed below said substrate, said first annular grounded electrode and said second annular grounded electrode being disposed such that a circumferential edge of said substrate is exposed in a direct line-of-sight manner to at least a portion of said first annular grounded electrode and at least a portion of said second annular grounded electrode;
- providing a plasma shield disposed above at least a portion of said substrate, said plasma shield being configured to prevent said plasma from being formed in a region between said plasma shield and said portion of said substrate during said processing;
- and
- generating a plasma in between said first annular grounded electrode and said second annular grounded electrode, thereby processing at least a portion of said circumferential edge of said substrate with said plasma.
A plasma processing system having a plasma processing chamber configured for processing a substrate, comprising:
- a RF power source;
- a lower electrode configured to support said substrate during said processing, said lower electrode receiving at least an RF signal from said RF power source for generating a plasma within said plasma processing chamber during said processing;
- a substrate edge plasma generating arrangement including at least a first annular grounded electrode and a second annular grounded electrode, said first annular grounded electrode disposed above said substrate, wherein said first annular grounded electrode does not overlap said substrate, said second annular grounded electrode disposed below said substrate, said first annular grounded electrode and said second annular grounded electrode being disposed such that a circumferential edge of said substrate is exposed in a direct line-of-sight manner to at least a portion of said first annular grounded electrode and at least a portion of said second annular grounded electrode;
- and
- plasma shielding means disposed above at least a portion of said substrate, said plasma shielding means being configured to prevent said plasma from being formed near an exposed metallization region on said substrate so as to cause arcing to said exposed metallization region during said processing.
Dependencies are inferred from the claim text.