US 2008/0156637 A1 · METHOD FOR FORMING PHOTOELECTRIC CONVERSION SUBSTRATE

Abstract

A method for forming photoelectric conversion substrate is provided. First, a conductive substrate is fixed onto a base in a vacuum chamber having a TiO2 target therein. After that, the vacuum chamber is heated so that the temperature therein is kept between 70˜100° C. Then, a plasma gas consisting of argon and oxygen is filled into the vacuum chamber. The filling pressure of the plasma gas is in the range of 1˜10 Pa and the flow ratio of argon to oxygen thereof is in the range of 9:1˜7:1. Finally, an anatase TiO2 layer is formed on the conductive substrate by sputtering. A method for manufacturing a dye-sensitized solar cell is also disclosed in the specification.

Claims14

Dependent claims

A method for forming a photoelectric conversion substrate, the method comprising:

fixing a conductive substrate on to a base in a vacuum chamber, wherein the vacuum chamber having TiO2 target therein;
heating the vacuum chamber and the temperature of the vacuum chamber being kept between 70˜100° C.;
filling a plasma gas consisting of argon and oxygen into the vacuum chamber, wherein a filling pressure is in the range of 1˜10 Pa, and a flow ratio of argon to oxygen is in the range of 9:1 to 7:1;
and
forming an anatase TiO2 layer on the conductive substrate by a sputtering process.

2 more elements

Dependencies are inferred from the claim text.

Method for forming photoelectric conversion substrate

Life of this patent

Method for forming photoelectric conversion substrate

Life of this patent

Abstract

Claims14