Homogeneous Copper Interconnects for BEOL
AssigneeInternational Business Machines Corporation
InventorsKevin S. Petrarca, Mahadevaiyer Krishnan, Michael Lofaro, Kenneth P. Rodbell
Life of this patent
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Abstract
Defects on the edge of copper interconnects for back end of the line semiconductor devices are alleviated by an interconnect that comprises an impure copper seed layer. The impure copper seed layer covers a barrier layer, which covers an insulating layer that has an opening. Electroplated copper fills the opening in the insulating layer. Through a chemical mechanical polish, the barrier layer, the impure an impure copper seed layer derived from an electroplated copper bath copper seed layer, and the electroplated copper are planarized to the insulating layer.
Claims12
A method for forming a copper interconnect, comprising the steps of:
- depositing an impure copper seed layer derived from an impure copper seed source with a content of impurities on a barrier layer, said barrier layer prevents substantial diffusion of said copper through to an underlying insulating layer and lines an opening in said underlying insulating layer, and,
- filling said opening with impure copper derived from an impure copper seed source with a content of impurities.
A method for forming a copper interconnect, comprising the steps of:
- depositing an insulating layer;
- etching an opening in said insulating layer;
- depositing a barrier layer that prevents copper diffusion through to said insulating layer, which lines said opening, in said insulating layer;
- and,
- filling said opening with impure copper seed derived from an impure copper seed source with a content of impurities.
Dependencies are inferred from the claim text.