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AssigneeHitachi, Ltd.
InventorsYusuke Yasuda, Toshiaki Morita, Eiichi Ide, Hiroshi Hozoji, Toshiaki Ishii
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It is an object of this invention to provide a bonding material capable of realizing bonding by metallic bonding at a bonding interface at a lower temperature compared to a bonding material using a metal particle having an average particle diameter of not more than 100 nm and a bonding method. There is provided a bonding material including a metal particle precursor being at least one selected from the group consisting of a particle of a metal oxide, a particle of a metal carbonate, and a particle of a metal carboxylate and having an average particle diameter of 1 nm to 50 μm and a reducing agent composed of an organic substance, wherein the content of the metal particle precursor is more than 50 parts by mass and not more than 99 parts by mass per 100 parts by mass of the bonding material.
A bonding material comprising a metal particle precursor being at least one selected from the group consisting of a particle of a metal oxide, a particle of a metal carbonate, and a particle of a metal carboxylate and having an average particle diameter of not less than 1 nm and not more than 50 μm and a reducing agent composed of an organic substance, wherein content of the metal particle precursor is more than 50 parts by mass and not more than 99 parts by mass per 100 parts by mass of the bonding material.
A paste bonding material comprising a metal particle precursor being at least one selected from the group consisting of a particle of a metal oxide, a particle of a metal carbonate, and a particle of a metal carboxylate and having an average particle diameter of not less than 1 nm and not more than 50 μm, a reducing agent composed of an organic substance, and a solvent.
A bonding method comprising arranging a bonding material comprising a metal particle precursor being at least one selected from the group consisting of a particle of a metal oxide, a particle of a metal carbonate, and a particle of a metal carboxylate and having an average particle diameter of not less than 1 nm and not more than 50 μm and a reducing agent composed of an organic substance between an electrode of a semiconductor device and a metal member, and bonding the electrode of the semiconductor device and the metal member together by heating and pressurization.
Dependencies are inferred from the claim text.