Process chamber lid and controlled exhaust

A substrate processing apparatus, comprising:

• a chamber having an interior volume sized to receive a single substrate, wherein the interior volume further comprises:
• a lower volume configured to maintain a liquid at a predetermined depth;
• and
• an upper volume configured to at least partially confine a gaseous atmosphere above the liquid;
• a lid member disposed on an upper portion of the chamber, the lid member comprising:
• a body having an upper surface and an underside and an opening formed between the upper surface and the underside, the opening sized to receive a single substrate;
• and
• a plurality of inlet channels and a plurality of exhaust channels formed in the body and disposed outward of and adjacent to the opening, wherein each of the plurality of inlet channels and the plurality of exhaust channels include one or more apertures formed in the underside and in fluid communication with the inlet channels and the exhaust channels.

A method of exhausting a semiconductor processing chamber, comprising:

• providing a chamber having an interior volume comprising:
• a lower volume;
• an upper volume;
• and
• an opening sized to receive at least one substrate;
• transferring the substrate through the upper volume and the opening to the lower volume;
• sealing the opening with a lid member coupled to the substrate transfer assembly;
• cleaning the substrate while providing a negative pressure to the upper volume;
• and
• transferring the substrate out of the lower volume while providing a vapor at a liquid/vapor interface disposed between the upper volume and the lower volume.