Plasma processing apparatus

Abstract

A clearance between a metal electrode and a sidewall portion (sidewall) of an approximately U-shaped dielectric is adjusted by, for example, partially inserting a heat insulator, a heat shield or an insulating material. Temperature difference in the Z direction (vertical direction) of the sidewall portion of approximately U-shaped dielectric is made smaller than temperature difference between front and rear sides at the bottom (bottom portion) of approximately U-shaped dielectric, to reduce warp in the Z direction of the sidewall portion of approximately U-shaped dielectric. This curbs warp in the Z direction of the bottom portion of approximately U-shaped dielectric coupled to the sidewall portion. The warp in the Z direction, which would be generated if the temperature difference only between the front and rear surfaces at the bottom were considered, can be curbed by utilizing the sidewall portion of approximately U-shaped dielectric.

Dependencies are inferred from the claim text.