System and method for producing synthetic diamond
AssigneeApollo Diamond, Inc.
InventorsRobert C. Linares, Patrick J. Doering
Life of this patent
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Abstract
Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described., as well as a system for use in performing such a method, and articles incorporating such a composition.
Claims18
A method of forming a synthetic diamond, the synthetic diamond comprising at least one monocrystalline diamond layer, the method comprising the steps of:
- (a) forming synthetic diamond by chemical vapor deposition, from a feed comprising a carbon source comprising 12C, in a layer to a thickness of at least 20 microns, and
- (b) controlling the concentration of:
- (i) 12C in the feed gas;
- (ii) an element with an atomic radius greater than 12C in the feed gas;
- and
- (iii) an element having an atomic radius less than 12C in the feed gas;
- wherein the synthetic diamond comprises less than about 1.1% by weight of an element with an atomic radius less than 12C per million parts of diamond and about 5 to about 50 parts of an element having an atomic radius greater than 12C per million parts of diamond.
A method of forming a synthetic diamond, the synthetic diamond comprising at least one monocrystalline diamond layer, the method comprising the steps of:
- (a) forming synthetic diamond by chemical vapor deposition, from a feed comprising a carbon source comprising 12C, 13C and 14N, in a layer to a thickness of at least 20 microns, and
- (b) controlling the concentration of:
- (i) 12C in the feed gas;
- (ii) 13C in the feed gas;
- and
- (iii) 14N in the feed gas;
- wherein the synthetic diamond comprises less than about 50 parts by weight of 14N per million parts of diamond and about 0.001 to about 0.8% parts of 13C per million parts of diamond.
A synthetic diamond comprising at least one monocrystalline diamond layer, the layer having a thickness of at least 20 microns, the layer comprising a synthetic diamond formed by chemical vapor deposition, the synthetic diamond comprising 12C;
- an element with an atomic radius greater than 12C;
- and an element having an atomic radius less than 12C;
- wherein the synthetic diamond comprises less than about 50 parts by weight of an element with an atomic radius greater than 12C per million parts of diamond and about 0.01 to 0.8% of an element having an atomic radius less than 12C per million parts of diamond.
A synthetic diamond comprising at least one monocrystalline diamond layer, the layer having a thickness of at least 20 microns, the layer consisting essentially of 12C, 13C and 14N;
- wherein the synthetic diamond comprises less than about 50 parts by weight of 14N per million parts of diamond and 13C comprises 0.001 to 0.8% of diamond.
Dependencies are inferred from the claim text.