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US 2008/0076243 A1Published application
Self-aligned non-volatile memory and method of forming the same
OwnerYi-Shing Changinventor
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Abstract
A non-volatile memory is described. A substrate comprising a stacked layer is provided. A sacrificial layer is deposited and patterned to form a first opening. A first spacer is formed on sidewalls of the first opening, and the stacked layer is etched using the first spacer as a first mask to form a second opening. An isolation layer is formed in a portion of the first and the second openings, and a conductive filling layer is formed thereon. The stacked layer is etched using a portion of the conductive filling layer as a second mask.
Claims14
A self-aligned fabrication method for a non-volatile memory, comprising:
- providing a substrate comprising a stacked layer formed thereon;
- forming a sacrificial layer on the stacked layer;
- patterning the sacrificial layer to form a first opening;
- forming a first spacer on a sidewall of the first opening;
- etching the stacked layer using the first spacer and the sacrificial layer as a first mask to form a second opening;
- forming a conductive filling layer filling the first and the second openings;
- and
- etching the stacked layer using the conductive filling layer as a second mask.
5 more elements
Dependencies are inferred from the claim text.