Method for producing doped regions in a substrate, and photovoltaic cell
AssigneeCommissariat a l'Energie Atomique
InventorsYannick Veschetti, Armand Bettinelli
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Abstract
Method for producing doped regions on the rear face of a photovoltaic cell. A doping paste with a first type of conductivity is deposited on a rear face of a semiconductor-based substrate according to a pattern consistent with the desired distribution of regions doped with the first type of conductivity. Then, an oxide layer is deposited at least on the portions of the rear face of the substrate not covered with the doping paste. Finally, an annealing of the substrate diffuses the doping agents in the substrate and forms doped regions under the doping paste.
Claims15
Method for producing doped regions on the rear face of a photovoltaic cell, comprising at least the steps of:
- a) depositing a first doping paste comprising doping agents with a first type of conductivity on a face, called the rear face, of a semiconductor-based substrate according to a pattern consistent with the desired distribution of regions doped with the first type of conductivity in the substrate,
- b) depositing an oxide layer at least on the portions of the rear face of the substrate not covered with the doping paste,
- c) annealing the substrate at a temperature diffusing the doping agents in the substrate and forming doped regions, in the substrate, under the doping paste.
Dependencies are inferred from the claim text.