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US 2008/0076239 A1Published application
Semiconductor device and method of manufacturing same
AssigneeRenesas Technology Corp.
InventorKazuyoshi Maekawa
Life of this patent
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Abstract
An electrode on a semiconductor substrate includes a polysilicon layer, a silicon-implanted layer on the polysilicon layer, a tungsten nitride layer on the silicon-implanted layer, a tungsten nitride layer on the silicon-implanted layer, and a tungsten layer on the tungsten nitride layer. The layer between the polysilicon layer and the tungsten nitride layer may be either a tungsten silicon nitride layer or a silicon-germanium layer.
Claims2
1-16. (canceled)
A method of manufacturing a semiconductor device comprising:
- forming a gate insulating film on a semiconductor substrate;
- forming a polysilicon layer on said gate insulating film;
- forming a tungsten nitride layer on said polysilicon layer;
- implanting germanium into said tungsten nitride layer to form a germanium implanted layer between said polysilicon layer and said tungsten nitride layer;
- thermally treating said germanium layer to produce a silicon-germanium layer;
- and
- forming a tungsten layer on said tungsten nitride layer.
4 more elements
Dependencies are inferred from the claim text.