Method for producing semi-conducting devices and devices obtained with this method
AssigneeOc Oerlikon Balzers AG
InventorsUlrich Kroll, Cedric Bucher, Jacques Schmitt, Markus Poppeller, Christoph Hollenstein, Juliette Ballutaud, Alan Howling
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Abstract
A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.
Claims6
A method for producing a semi-conducting device comprising at least a first plasma-deposited layer doped with a doping agent and a second plasma-deposited layer deposited on said first doped layer in a single reaction chamber, wherein the deposition steps of said first and second layers are separated by an operation for avoiding the contamination of said second layer by the doping agent, wherein said operation comprises a dosing of the reaction chamber, having said first doped layer therein, with a vapour or gas comprising water, methanol, isopropanol or another alcohol without plasma,
- wherein as a result of said dosing, residual doping agent from the deposition of said first layer that is present on internal surfaces of said reaction chamber is transformed into stable chemical compounds unable to desorb.
Dependencies are inferred from the claim text.