Laser processing method for wafer
AssigneeDisco Corporation
InventorsYukio Morishige, Kenji Asano, Yohei Yamashita
Life of this patent
Estimating the term…
Abstract
A laser processing method for a wafer such that a laser beam is applied to a work surface of the wafer along a separation line formed on the work surface to thereby form a laser processed groove along the separation line on the work surface by ablation. The laser processing method includes a protective material coating step for coating the work surface of the wafer with a liquid protective material mainly containing a water-soluble silicone oil and a laser processed groove forming step for applying the laser beam to the work surface coated with the protective material along the separation line in the condition that the protective material has fluidity, thereby forming the laser processed groove along the separation line.
Claims5
A laser processing method for a wafer such that a laser beam is applied to a work surface of said wafer along a separation line formed on said work surface to thereby form a laser processed groove along said separation line on said work surface by ablation, said laser processing method comprising:
- a protective material coating step for coating said work surface of said wafer with a liquid protective material mainly containing a water-soluble silicone oil;
- and
- a laser processed groove forming step for applying said laser beam to said work surface coated with said protective material along said separation line in the condition that said protective material has fluidity, thereby forming said laser processed groove along said separation line.
Dependencies are inferred from the claim text.