Method of removing impurities on a grinding surface of a semiconductor wafer, equipment of removing impurities on a grinding surface of a semiconductor wafer, process of manufacture of semiconductor wafer, process of manufacture of semiconductor chip and semiconductor device

Abstract

A method of removing impurities on a grinding surface of a thinned semiconductor wafer for producing a highly reliable semiconductor device is provided even when the thickness of a semiconductor chip is thinned. After grinding the back surface of the semiconductor wafer, the impurities on the grinding surface are removed by sandblast processing. The sand particles used in the sandblast processing do not contain copper or nickel, and a concentration of copper or nickel contained in the particles is desirably 1014 atoms·cm−3 or less. After the sandblast processing, compress air is jetted onto the grinding surface of the thinned semiconductor wafer, thereby removing foreign substances, surplus particles or the like on the grinding surface. Then, semiconductor chips are obtained by dicing the thinned semiconductor wafer.

Dependencies are inferred from the claim text.