Manufacturing method of semiconductor device

A manufacturing method of a semiconductor device comprising a semiconductor substrate on which a plurality of semiconductor chips are formed, the plurality of semiconductor chips having electrode pads, internal connection terminals provided on the electrode pads and wiring patterns connected to the internal connection terminals,

• the method comprising:
• an insulating resin formation process for forming an insulating resin so as to cover the internal connection terminals and a surface of the plurality of semiconductor chips on which the internal connection terminals are provided;
• a metal layer lamination process for sequentially laminating a first metal layer and a second metal layer on the insulating resin;
• a pressure bonding process for pressure-bonding the first metal layer and the internal connection terminals by pressing the second metal layer;
• a connection pad formation process for forming connection pads by etching the second metal layer after the pressure bonding process;
• and
• a wiring pattern formation process for forming the wiring pattern by etching the first metal layer.

A manufacturing method of a semiconductor device comprising a semiconductor substrate on which a plurality of semiconductor chips are formed, the plurality of semiconductor chips having electrode pads, internal connection terminals provided on the electrode pads and wiring patterns connected to the internal connection terminals,

• the method comprising:
• an insulating resin formation process for forming an insulating resin so as to cover the internal connection terminals and a surface of the plurality of semiconductor chips on which the internal connection terminals are provided;
• a layer lamination process for sequentially laminating a first metal layer, a second metal layer and a protective layer for protecting the second metal layer on the insulating resin;
• a pressure bonding process for pressure-bonding the first metal layer and the internal connection terminals by pressing the protective layer after the layer lamination process;
• a protective layer elimination process for eliminating the protective layer after the pressure bonding process;
• a connection pad formation process for forming connection pads by etching the second metal layer;
• and
• a wiring pattern formation process for forming the wiring patterns by etching the first metal layer.

A manufacturing method of a semiconductor device comprising a semiconductor substrate on which a plurality of semiconductor chips are formed, the plurality of semiconductor chips having electrode pads, internal connection terminals provided on the electrode pads and wiring patterns connected to the internal connection terminals,

• the method comprising:
• an insulating resin formation process for forming an insulating resin so as to cover the internal connection terminals and a surface of the plurality of semiconductor chips on which the internal connection terminals are provided;
• a metal layer lamination process for sequentially laminating a first metal layer, a second metal layer and a third metal layer on the insulating resin;
• a pressure bonding process for pressure-bonding the first metal layer and the internal connection terminals by pressing the third metal layer;
• a metal post formation process for forming metal posts by etching the third metal layer after the pressure bonding process;
• a connection pad formation process for forming connection pads by etching the second metal layer;
• and
• a wiring pattern formation process for forming the wiring patterns by etching the first metal layer.

A manufacturing method of a semiconductor device comprising a semiconductor substrate on which a plurality of semiconductor chips are formed, the plurality of semiconductor chips having electrode pads, internal connection terminals provided on the electrode pads and wiring patterns connected to the internal connection terminals,

• the method comprising:
• an anisotropic conductive resin formation process for forming an anisotropic conductive resin so as to cover the internal connection terminals and a surface of the plurality of semiconductor chips on which the internal connection terminals are provided;
• a metal layer formation process for forming a metal layer on the anisotropic conductive resin;
• a pressure bonding process for pressure-bonding the metal layer and the internal connection terminals by pressing the metal layer;
• and
• a wiring pattern formation process for forming the wiring patterns by etching the metal layer after the pressure bonding process.

A manufacturing method of a semiconductor device comprising a semiconductor substrate on which a plurality of semiconductor chips are formed, the plurality of semiconductor chips having electrode pads, internal connection terminals provided on the electrode pads and wiring patterns connected to the internal connection terminals,

• the method comprising;
• an anisotropic conductive resin formation process for forming an anisotropic conductive resin so as to cover the internal connection terminals and a surface of the plurality of semiconductor chips on which the internal connection terminals are provided;
• a metal layer lamination process for sequentially laminating a first metal layer and a second metal layer on the anisotropic conductive resin;
• a pressure bonding process for pressure-bonding the first metal layer and the internal connection terminals by pressing the second metal layer;
• a connection pad formation process for forming connection pads by etching the second metal layer after the pressure bonding process;
• and
• a wiring pattern formation process for forming the wiring patterns by etching the first metal layer.

A manufacturing method of a semiconductor device comprising a semiconductor substrate on which a plurality of semiconductor chips are formed, the plurality of semiconductor chips having electrode pads, internal connection terminals provided on the electrode pads and wiring patterns connected to the internal connection terminals,

• the method comprising:
• an anisotropic conductive resin formation process for forming an anisotropic conductive resin so as to cover the internal connection terminals and a surface of the plurality of semiconductor chips on which the internal connection terminals are provided;
• a layer lamination process for sequentially laminating a first metal layer, a second metal layer and a protective layer for protecting the second metal layer on the anisotropic conductive resin;
• a pressure bonding process for pressure-bonding the first metal layer and the internal connection terminals by pressing the protective layer after the layer lamination process;
• a protective layer elimination process for eliminating the protective layer after the pressure bonding process;
• a connection pad formation process for forming connection pads by etching the second metal layer;
• and
• a wiring pattern formation process for forming the wiring patterns by etching the first metal layer.

A manufacturing method of a semiconductor device comprising a semiconductor substrate on which a plurality of semiconductor chips are formed, the plurality of semiconductor chips having electrode pads, internal connection terminals provided on the electrode pads and wiring patterns connected to the internal connection terminals,

• the method comprising:
• an anisotropic conductive resin formation process for forming an anisotropic conductive resin so as to cover the internal connection terminals and a surface of the plurality of semiconductor chips on which the internal connection terminals are provided;
• a metal layer lamination process for sequentially laminating a first metal layer, a second metal layer and a third metal layer on the anisotropic conductive resin;
• a pressure bonding process for pressure-bonding the first metal layer and the internal connection terminals by pressing the third metal layer;
• a metal post formation process for forming metal posts by etching the third metal layer after the pressure bonding process;
• a connection pad formation process for forming connection pads by etching the second metal layer;
• and
• a wiring pattern formation process for forming the wiring patterns by etching the first metal layer.