Donor sheet and method of manufacturing donor sheet and organic thin film transistor
AssigneeKonica Minolta Holdings, Inc.
InventorsMitsuyoshi Miyai, Masakazu Okada
Life of this patent
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Abstract
A method of manufacturing a donor sheet for transferring a transfer layer having a prescribed shape onto a receiving substrate, wherein: a step for forming an organic semiconductor precursor wherein a solution in which the organic semiconductor precursor which converts to an organic semiconductor due to heat, is coated on a substrate sheet; a step for forming a transfer layer of a prescribed shape by heating the organic semiconductor precursor layer in the prescribed shape to convert the organic semiconductor precursor layer to the organic semiconductor; and a step for removing the organic semiconductor precursor that is not converted to the organic semiconductor are performed in that order.
Claims18
A method of manufacturing a donor sheet for transferring a transfer layer in a predetermined shape onto a receiving substrate, the method comprising the steps in the following order:
- forming an organic semiconductor precursor layer on a substrate sheet by applying to the substrate sheet a solution in which an organic semiconductor precursor which converts to an organic semiconductor by being heated is resolved;
- forming the transfer layer in the predetermined shape by heating the organic semiconductor precursor layer in the predetermined shape to convert the organic semiconductor precursor to an organic semiconductor;
- and
- removing an organic semiconductor precursor which is not converted to the organic semiconductor.
A donor sheet manufactured by a method comprising the steps in the following order:
- forming an organic semiconductor precursor layer on a substrate sheet by applying to the substrate sheet a solution in which an organic semiconductor precursor which converts to an organic semiconductor by being heated is resolved;
- forming the transfer layer in the predetermined shape by heating the organic semiconductor precursor layer in the predetermined shape to convert the organic semiconductor precursor to an organic semiconductor;
- and
- removing an organic semiconductor precursor which is not converted to the organic semiconductor.
A method of manufacturing an organic thin film transistor, which has on a substrate at least a source electrode, a drain electrode, an organic semiconductor layer connecting the source electrode and the drain electrode, a gate electrode, and a gate insulation layer between the organic semiconductor layer and the gate electrode, using a donor sheet and a receiving member which has the substrate on which at least the source electrode and the drain electrode are provided as an uppermost layer, the method comprising the steps in the following order:
- laying the donor sheet on the receiving member in a direction in which a transfer layer of the donor sheet including an organic semiconductor contacts with the source electrode and the drain electrode of the receiving member;
- heating the donor sheet;
- and
- separate the donor sheet and the receiving member,
- wherein a method of manufacturing the donor sheet comprising the steps in the following order:
- forming an organic semiconductor precursor layer on a substrate sheet by applying to the substrate sheet a solution in which an organic semiconductor precursor which converts to an organic semiconductor by being heated is resolved;
- forming the transfer layer in the predetermined shape by heating the organic semiconductor precursor layer in the predetermined shape to convert the organic semiconductor precursor to an organic semiconductor;
- and
- removing an organic semiconductor precursor which is not converted to the organic semiconductor.
A method of manufacturing an organic thin film transistor, which has on a substrate at least a source electrode, a drain electrode, an organic semiconductor layer connecting the source electrode and the drain electrode, a gate electrode, and a gate insulation layer between the organic semiconductor layer and the gate electrode, using a donor sheet and a receiving member which has the substrate on which the gate electrode and, as an uppermost layer, the gate insulation layer are provided, the method comprising the steps in the following order:
- laying the donor sheet on the receiving member in a direction in which a transfer layer of the donor sheet including an organic semiconductor contacts with the gate insulation layer of the receiving member;
- heating the donor sheet;
- and
- separate the donor sheet and the receiving member,
- wherein a method of manufacturing the donor sheet comprising the steps in the following order:
- forming an organic semiconductor precursor layer on a substrate sheet by applying to the substrate sheet a solution in which an organic semiconductor precursor which converts to an organic semiconductor by being heated is resolved;
- forming the transfer layer in the predetermined shape by heating the organic semiconductor precursor layer in the predetermined shape to convert the organic semiconductor precursor to an organic semiconductor;
- and
- removing an organic semiconductor precursor which is not converted to the organic semiconductor.
A method of manufacturing an organic thin film transistor, which has on a substrate at least a source electrode, a drain electrode, an organic semiconductor layer connecting the source electrode and the drain electrode, a gate electrode, and a gate insulation layer between the organic semiconductor layer and the gate electrode, using a donor sheet and a receiving member which has the substrate on which the gate electrode and the gate insulation layer are formed in this order, and a water-repellent layer is provided as an uppermost layer, the method comprising the steps in the following order:
- laying the donor sheet on the receiving member in a direction in which a transfer layer of the donor sheet including an organic semiconductor contacts with the water-repellent layer of the receiving member;
- heating the donor sheet;
- and
- separate the donor sheet and the receiving member,
- wherein a method of manufacturing the donor sheet comprising the steps in the following order:
- forming an organic semiconductor precursor layer on a substrate sheet by applying to the substrate sheet a solution in which an organic semiconductor precursor which converts to an organic semiconductor by being heated is resolved;
- forming the transfer layer in the predetermined shape by heating the organic semiconductor precursor layer in the predetermined shape to convert the organic semiconductor precursor to an organic semiconductor;
- and
- removing an organic semiconductor precursor which is not converted to the organic semiconductor.
A method of manufacturing a donor sheet for transferring a transfer layer in a predetermined shape onto a receiving substrate, the method comprising the steps in the following order:
- forming a photothermal conversion layer on a substrate sheet;
- forming an organic semiconductor precursor layer by applying to the photothermal conversion layer a solution in which an organic semiconductor precursor which converts to an organic semiconductor by being heated is resolved;
- forming the transfer layer in the predetermined shape by applying to the organic semiconductor precursor layer a light beam in the predetermined shape to heat the organic semiconductor precursor layer in the predetermined shape by heat generated by the photothermal conversion layer and to convert the organic semiconductor to an organic semiconductor;
- and
- removing an organic semiconductor precursor which is not converted to the organic semiconductor.
A donor sheet manufactured by a method comprising the steps in the following order:
- forming a photothermal conversion layer on a substrate sheet;
- forming an organic semiconductor precursor layer by applying to the photothermal conversion layer a solution in which an organic semiconductor precursor which converts to an organic semiconductor by being heated is resolved;
- forming the transfer layer in the predetermined shape by applying to the organic semiconductor precursor layer a light beam in the predetermined shape to heat the organic semiconductor precursor layer in the predetermined shape by heat generated by the photothermal conversion layer and to convert the organic semiconductor to an organic semiconductor;
- and
- removing an organic semiconductor precursor which is not converted to the organic semiconductor.
A method of manufacturing an organic thin film transistor, which has on a substrate at least a source electrode, a drain electrode, an organic semiconductor layer connecting the source electrode and the drain electrode, a gate electrode, and a gate insulation layer between the organic semiconductor layer and the gate electrode, using a donor sheet and a receiving member which has the substrate on which at least the source electrode and the drain electrode are provided as an uppermost layer, the method comprising the steps in the following order:
- laying the donor sheet on the receiving member in a direction in which a transfer layer of the donor sheet including an organic semiconductor contacts with the source electrode and the drain electrode of the receiving member;
- heating the donor sheet;
- and
- separate the donor sheet and the receiving member,
- wherein a method of manufacturing the donor sheet comprising the steps in the following order:
- forming a photothermal conversion layer on a substrate sheet;
- forming an organic semiconductor precursor layer by applying to the photothermal conversion layer a solution in which an organic semiconductor precursor which converts to an organic semiconductor by being heated is resolved;
- forming the transfer layer in the predetermined shape by applying to the organic semiconductor precursor layer a light beam in the predetermined shape to heat the organic semiconductor precursor layer in the predetermined shape by heat generated by the photothermal conversion layer and to convert the organic semiconductor precursor to an organic semiconductor;
- and
- removing an organic semiconductor precursor which is not converted to the organic semiconductor.
A method of manufacturing an organic thin film transistor, which has on a substrate at least a source electrode, a drain electrode, an organic semiconductor layer connecting the source electrode and the drain electrode, a gate electrode, and a gate insulation layer between the organic semiconductor layer and the gate electrode, using a donor sheet and a receiving member which has the substrate on which the gate electrode and, as an uppermost layer, the gate insulation layer are provided, the method comprising the steps in the following order:
- laying the donor sheet on the receiving member in a direction in which a transfer layer of the donor sheet including an organic semiconductor contacts with the gate insulation layer of the receiving member;
- heating the donor sheet;
- and
- separate the donor sheet and the receiving member,
- wherein a method of manufacturing the donor sheet comprising the steps in the following order:
- forming a photothermal conversion layer on a substrate sheet;
- forming an organic semiconductor precursor layer by applying to the photothermal conversion layer a solution in which an organic semiconductor precursor which converts to an organic semiconductor by being heated is resolved;
- forming the transfer layer in the predetermined shape by applying to the organic semiconductor precursor layer a light beam in the predetermined shape to heat the organic semiconductor precursor layer in the predetermined shape by heat generated by the photothermal conversion layer and to convert the organic semiconductor precursor to an organic semiconductor;
- and
- removing an organic semiconductor precursor which is not converted to the organic semiconductor.
A method of manufacturing an organic thin film transistor, which has on a substrate at least a source electrode, a drain electrode, an organic semiconductor layer connecting the source electrode and the drain electrode, a gate electrode, and a gate insulation layer between the organic semiconductor layer and the gate electrode, using a donor sheet and a receiving member which has the substrate on which the gate electrode and the gate insulation layer are formed in this order, and a water-repellent layer is provided as an uppermost layer, the method comprising the steps in the following order:
- laying the donor sheet on the receiving member in a direction in which a transfer layer of the donor sheet including an organic semiconductor contacts with the water-repellent layer of the receiving member;
- heating the donor sheet;
- and
- separate the donor sheet and the receiving member,
- wherein a method of manufacturing the donor sheet comprising the steps in the following order:
- forming a photothermal conversion layer on a substrate sheet;
- forming an organic semiconductor precursor layer by applying to the photothermal conversion layer a solution in which an organic semiconductor precursor which converts to an organic semiconductor by being heated is resolved;
- forming the transfer layer in the predetermined shape by applying to the organic semiconductor precursor layer a light beam in the predetermined shape to heat the organic semiconductor precursor layer in the predetermined shape by heat generated by the photothermal conversion layer and to convert the organic semiconductor precursor to an organic semiconductor;
- and
- removing an organic semiconductor precursor which is not converted to the organic semiconductor.
Dependencies are inferred from the claim text.