Method for Fabrication Group III Nitride Semiconductor
AssigneeShowa Denko K.K.
InventorsMasato Kobayakawa, Hisayuki Miki
Life of this patent
Estimating the term…
Abstract
A method for the fabrication of a Group III nitride semiconductor includes the steps of installing a substrate in a reaction vessel, forming a Group III nitride semiconductor on the substrate, causing a solid nitrogen compound to exist in the reaction vessel as a nitrogen source for a Group III nitride semiconductor and supplying a raw material gas as a source for a Group III element into the reaction vessel to fabricate the Group III nitride semiconductor.
Claims13
A method for the fabrication of a Group III nitride semiconductor comprising the steps of installing a substrate in a reaction vessel, forming a Group III nitride semiconductor on the substrate, causing a solid nitrogen compound to exist in the reaction vessel as a nitrogen source for a Group III nitride semiconductor and supplying a raw material gas as a source for a Group III element into the reaction vessel to fabricate the Group III nitride semiconductor.
Dependencies are inferred from the claim text.