Semiconductor light generating device

A method of making a semiconductor light generating device, the method comprising the steps of:

• forming an active region including an undoped InAlAGaN semiconductor film;
• forming an undoped AlX2Ga1-X2N semiconductor film (0≦X2≦1) on the InAlGaN semiconductor film active region;
• and
• forming a p-type AlX1Ga1-X1N semiconductor film (0≦X1≦1) and one or more gallium nitride based semiconductor films on the undoped AlX2Ga1-X2N semiconductor film and causing p-type dopant atoms in the p-type AlX1Ga1-X1N semiconductor film to diffuse to the undoped AlX2Ga1-X2N semiconductor film.

A method of making a semiconductor light generating device, the method comprising the steps of:

• forming an active region including an undoped InAlGaN semiconductor well layer and an undoped InAlGaN semiconductor barrier layer;
• forming an undoped AlX2Ga1-X2N semiconductor film (0≦X2≦1) on the the active region;
• and
• forming a p-type AlX1Ga1-X1N semiconductor film (0≦X1≦1) and one or more gallium nitride based semiconductor films on the undoped AlX2Ga1-X2N semiconductor film and causing p-type dopant atoms in the p-type AlX1Ga1-X1N semiconductor film to diffuse to the undoped AlX2Ga1-X2N semiconductor film.