Contrast enhancing layers
AssigneeMassachuetts Institute of Technology
InventorTheodore H. Fedynyshyn
Life of this patent
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Abstract
Contrast enhancing layers and other materials that can be used as a conformal mask over a photoresist are discussed. In particular, methods and compositions are discussed that can be advantageous when performing lithography using short wavelength actinic radiation (e.g., wavelengths below 200 nm, such as 193 nm or 157 nm). For example, contrast enhancing layers that include an organosilicon containing material can be used to enhance the contrast of a pattern formed on an underlying photoresist layer. Silicon containing polymers, oligomers, and other non-polymeric materials can be used as effective CEL materials.
Claims54
A method of enhancing the image contrast of a pattern formed on a photoresist, comprising:
- forming a photoresist layer on a substrate, the photoresist layer capable of being patterned by radiation having a wavelength below about 200 nm;
- forming a contrast enhancing layer (CEL) coupled to the photoresist layer, the CEL comprising an organosilicon containing material that is photobleachable by exposure to the radiation;
- and
- exposing an image pattern on a surface of the CEL with actinic radiation having a wavelength below about 200 nm to thereby bleach the CEL, and form a corresponding pattern on the photoresist layer with enhanced image contrast relative to directly exposing the actinic radiation image pattern on the photoresist layer.
A photosensitive composition for performing lithography, comprising:
- a photoresist layer coupled to a substrate, the photoresist layer capable of forming an image pattern thereon when exposed to actinic radiation having a wavelength below about 200 nm;
- and
- a contrast-enhancing layer (CEL) coupled to a surface of the photoresist layer, the CEL comprising a polymer having at least a portion that is a polysilyne capable of being photobleached by the actinic radiation, the CEL effective to enhance image contrast of the image pattern formed on the photoresist layer by the actinic radiation.
A photosensitive composition for performing lithography, comprising:
- a photoresist layer coupled to a substrate, the photoresist layer capable of forming an image pattern thereon when exposed to actinic radiation having a wavelength below about 200 nm;
- and
- a contrast-enhancing layer (CEL) coupled to a surface of the photoresist layer, the CEL comprising a plasma polymerized organosilicon composition capable of being photobleached by the actinic radiation, the CEL effective to enhance image contrast of the image pattern formed on the photoresist layer by the actinic radiation.
A photosensitive composition for performing lithography, comprising:
- a photoresist layer coupled to a substrate, the photoresist layer capable of forming an image pattern thereon when exposed to actinic radiation having a wavelength below about 200 nm;
- and
- a contrast-enhancing layer (CEL) coupled to a surface of the photoresist layer, the CEL comprising a non-polymeric organosilicon composition capable of being photobleached by the actinic radiation and a polymer composition for enhancing film formation, the CEL effective to enhance image contrast of the image pattern formed on the photoresist layer by the actinic radiation.
Dependencies are inferred from the claim text.