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US 2008/0076035 A1Published application
Phase shift mask structure and fabrication process
AssigneeIntel Corporation
InventorPei-yang Yan
Life of this patent
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Abstract
A photomask and method for fabricating a photomask are generally described. In one example, a photomask includes a substrate, a multilayer (ML) stack having a peripheral region that is rendered substantially opaque for a desired wavelength of radiation by localized heating, and a first and second film applied to the ML stack, the thickness of the first and second films selected to provide desired phase shift and attenuation.
Claims32
A photomask comprising:
- a substrate;
- a multilayer (ML) stack coupled to the substrate, the ML stack comprising one or more particular material(s) and having a peripheral region, the peripheral region being rendered substantially opaque for a desired wavelength of radiation by heating the particular material(s);
- a first film of a first selected thickness coupled to the ML stack;
- and
- a second film of a second selected thickness coupled to the first film, the first thickness and the second thickness selected to provide desired phase shift and attenuation.
2 more elements
A method for fabricating a photomask comprising:
- providing a substrate;
- depositing a multilayer (ML) stack on the substrate, the ML stack comprising one or more particular material(s) and having a peripheral region;
- heating the peripheral region of the ML stack to render the peripheral region substantially opaque for a desired wavelength of radiation;
- depositing a first film of a first selected thickness on the ML stack;
- and
- depositing a second film of a second selected thickness on the first film, the first and second thickness selected to provide desired phase shift and attenuation.
3 more elements
Dependencies are inferred from the claim text.