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US 2008/0075974 A1Published application
Laminating magnetic materials in a semiconductor device
AssigneeIntel Corporation
InventorsArnel M. Fajardo, Ebrahim Andideh, Changmin Park, Patrick Morrow
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Abstract
A technique includes forming overlaying magnetic metal layers over a semiconductor substrate. The technique includes forming at least one resistance layer between the magnetic metal layers.
Claims26
A method comprising:
- forming overlaying magnetic metal layers over a semiconductor substrate;
- and
- forming at least one metal nitride layer between the magnetic metal layers.
A method comprising:
- forming a first magnetic metal layer over a semiconductor substrate;
- forming a metal nitride layer over the first magnetic metal layer;
- and
- forming a second magnetic layer over the metal nitride layer.
1 more element
An apparatus comprising:
- a semiconductor substrate;
- and
- a laminated magnetic core fabricated on the substrate, comprising:
- magnetic metal layers formed over the substrate;
- and
- metal nitride layers located between the magnetic metal layers to impede eddy currents in the core.
3 more elements
A system comprising:
- a dynamic random access memory;
- and
- a converter to provide power to the dynamic random access memory, the converter comprising a semiconductor substrate and a laminated magnetic core fabricated on the substrate, the laminated magnetic core comprising:
- magnetic metal layers formed over the substrate;
- and
- metal nitride layers located between the magnetic metal layers to impede eddy currents in the core.
3 more elements
Dependencies are inferred from the claim text.