Methods For Depositing Metal Films On Diffusion Barrier Layers By CVD Processes

A process for forming a metal film on an at least one surface of a diffusion barrier layer, the process consisting of:

• providing the at least one surface of the diffusion barrier layer, wherein the diffusion barrier layer comprises at least one material selected from the group consisting of a metal, a metal carbide, a metal nitride, a metal carbonitride, a metal silicon carbide, a metal silicon nitride, a metal silicon carbonitride, and mixtures thereof, wherein the diffusion barrier layer is not substantially free of elemental metal because either (i) the at least one material is the metal, (ii) the diffusion barrier layer has an orientation other than a substantially (111) preferred orientation, or (iii) the diffusion barrier layer has less than 95% of a (111) preferred orientation;
• exposing the at least one surface of the diffusion barrier layer to an at least one adhesion promoting agent selected from the group consisting of a nitrogen, a nitrogen-containing compound, a carbon-containing compound, a carbon and nitrogen containing compound, a silicon-containing compound, a silicon and carbon containing compound, a silicon, carbon, and nitrogen containing compound or a mixture thereof, is conducted at a temperature of from 40° C. to 400° C. such that the at least one surface becomes substantially free of an elemental metal;
• and
• forming the metal film on at least a portion of the surface using an at least one organometallic precursor by a chemical vapor deposition process.