Chalcogenide Compound Target, Method of Forming the Chalcogenide Compound Target and Method for Manufacturing a Phase-Change Memory Device

A method of forming a chalcogenide compound target, comprising:

• forming a first powder including germanium carbide or germanium;
• forming a second powder including antimony carbide or antimony;
• forming a third powder including tellurium carbide or tellurium;
• forming a powder mixture by mixing the first to the third powders;
• drying the powder mixture;
• forming a shaped body by molding the powder mixture;
• and
• sintering the shaped body.

A method of manufacturing a phase-change memory device, comprising:

• forming a contact region on a substrate;
• forming a lower electrode electrically connected to the contact region;
• forming a phase-change material layer on the lower electrode using a chalcogenide compound target including carbon and metal, or carbon, nitrogen and metal;
• and
• forming an upper electrode on the phase-change material layer.

A method of manufacturing a phase-change memory device, comprising:

• forming a contact region on a substrate;
• forming a lower electrode electrically connected to the contact region;
• forming a phase-change material layer on the lower electrode by a sputtering process using a first target including carbon or metal carbide, and a second target including a chalcogenide compound;
• and
• forming an upper electrode on the phase-change material layer.