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AssigneeAlps Electric Co., Ltd.
InventorsKazumasa Nishimura, Masamichi Saito, Yosuke Ide, Masahiko Ishizone, Ryo Nakabayashi, Naoya Hasegawa
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A tunneling magnetic sensing element including an Mg—O insulating barrier which can maintain favorable soft-magnetic properties of a free magnetic layer and can have a high resistance change ratio (ΔR/R) compared to known tunnel magnetic sensing elements is disclosed, and a method of manufacturing such a tunneling magnetic sensing element is also discloded. An enhance layer (second magnetic layer) composed of Co100-XFeX having a Fe composition ratio X of about 30 to 100 at % is disposed on the Mg—O insulating barrier. With this, the magnetostriction λ of the free magnetic layer can be reduced and the resistance change ratio (ΔR/R) can be increased.
A tunneling magnetic sensing element comprising:
A method of manufacturing a tunneling magnetic sensing element including a first magnetic layer, an insulating barrier, and a second magnetic layer which are laminated in this order from the bottom, wherein the first magnetic layer constitutes at least a part of a pinned magnetic layer having a pinned magnetization direction, and the second magnetic layer constitutes at least a part of a free magnetic layer having a magnetization direction being changed by an external magnetic field, the method comprising the steps of:
Dependencies are inferred from the claim text.