Current perpendicular to plane (CPP) magnetoresistive sensor with improved pinned layer

A dual current perpendicular to plane giant magnetoresistive (Dual CPP GMR) sensor, comprising:

• a first pinned layer structure, comprising:
• a first layer of CoFe contacting, the first CoFe layer having a thickness of 8-20 Angstroms and an Fe content of 30-80 atomic percent;
• a first layer of Co formed over the first CoFe layer;
• a second layer of Co;
• at least one spin blocking layer sandwiched between the first and second Co layers;
• a non-magnetic, electrically conductive antiparallel coupling layer (AP coupling layer) formed over the second Co layer;
• second, third and fourth layers of CoFe formed over the AP coupling layer, the second third and fourth CoFe layers having an Fe content of 25-75 atomic percent and a total combined thickness of 20-50 Angstroms;
• a first non-magnetic nano-layer sandwiched between the second and third CoFe layers;
• and
• a second non-magnetic nano-layer sandwiched between the third and fourth CoFe layers;
• and
• a second pinned layer structure formed above the first pinned layer structure the second pinned layer structure having a structure similar to, but the mirror image of the first pinned layer structure such that the layers are deposited in reverse order to those of the first pinned layer structure.