Magnetoresistance Element Magnetic Random Access Memory, Magnetic Head and Magnetic Storage Device
AssigneeNEC Corporation
InventorNobuyuki Ishiwata
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AssigneeNEC Corporation
InventorNobuyuki Ishiwata
Estimating the term…
A magnetoresistance element includes an antiferromagnetic layer, a fixed ferromagnetic layer, a first nonmagnetic layer and a free ferromagnetic layer. The antiferromagnetic layer is formed on the upper surface side of a substrate. The fixed ferromagnetic layer is formed on the antiferromagnetic layer. The first nonmagnetic layer is formed on the fixed ferromagnetic layer. The free ferromagnetic layer is formed on the first nonmagnetic layer. The fixed ferromagnetic layer is provided with an amorphous layer. The amorphous layer contains amorphous material having a composition expressed by a chemical formula of X—Y-Z. X is an element selected from Co, Fe and Ni. Y is an element selected from Al, Si, Mg, Ta, Nb, Zr, Hf, W, Mo, Ti and V. Z is an element selected from N, C and B.
A magnetoresistance element comprising:
A manufacturing method of a magnetoresistance element, said method comprising:
A magnetic head comprising:
A magnetic recording device comprising:
Dependencies are inferred from the claim text.