Monomorph type piezoelectric/electrostrictive device and method for manufacturing the same
AssigneeNGK Insulators, Ltd.
InventorsRitsu Tanaka, Hirofumi Yamaguchi, Yukinobu Yura, Shuichi Ozawa
Life of this patent
Estimating the term…
Loading patent…
AssigneeNGK Insulators, Ltd.
InventorsRitsu Tanaka, Hirofumi Yamaguchi, Yukinobu Yura, Shuichi Ozawa
Estimating the term…
A monomorph type piezoelectric/electrostrictive device includes a piezoelectric/electrostrictive body, which is composed of a non-lead based piezoelectric/electrostrictive crystalline body containing at least Nb, Ta, and one or more types of alkali metal element, which has a cubic crystal structure at a temperature higher than the phase transition point and at least any one of tetragonal and orthorhombic crystal structures at a temperature lower than the phase transition point, and which is curved to a large extent by a polarization treatment to take on a curved shape at a temperature lower than the phase transition point without application of a voltage after the polarization treatment. In the polarization treatment, an electric field is increased at a speed of from 0.1 (kV/mm)/sec or more to 5 (kV/mm)/sec or less, with applying the maximum electric field of from 2 kV/mm or more to 1.0 kV/mm or less.
A monomorph type piezoelectric/electrostrictive device comprising a non-lead based piezoelectric/electrostrictive crystalline body containing at least Nb, Ta, and one or more types of alkali metal element, wherein the piezoelectric/electrostrictive crystalline body has a cubic crystal structure at a temperature higher than a phase transition point and at least any one of tetragonal and orthorhombic crystal structures at a temperature lower than the phase transition point, and wherein the piezoelectric/electrostrictive crystalline body shows a curved shape having a degree of curving larger than that before a polarization treatment at a room temperature lower than the phase transition point, when the piezoelectric/electrostrictive crystalline body is subjected to the polarization treatment.
A method for manufacturing a monomorph type piezoelectric/electrostrictive device comprising a non-lead based piezoelectric/electrostrictive crystalline body containing at least Nb, Ta, and one or more types of alkali metal element, wherein the piezoelectric/electrostrictive crystalline body has a cubic crystal structure at a temperature higher than a phase transition point and at least any one of tetragonal and orthorhombic crystal structures at a temperature lower than the phase transition point, and wherein the piezoelectric/electrostrictive crystalline body shows a curved shape having a degree of curving larger than that before a polarization treatment at a room temperature lower than the phase transition point, when the piezoelectric/electrostrictive crystalline body is subjected to the polarization treatment, which includes the step of
Dependencies are inferred from the claim text.