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US 2008/0073751 A1Published application
Memory cell and method of manufacturing thereof
OwnerRainer Bruchhausinventor
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Abstract
A memory cell includes a substrate, a first electrode disposed over the substrate a resistance element disposed over the first electrode, a second electrode disposed over the resistance element, the second electrode comprising an alloy, the alloy being formed from a first metal layer deposited on the resistance element, a second metal layer deposited on the first metal layer and heating the first and second metal layers.
Claims17
A memory cell, comprising:
- a substrate;
- a first electrode disposed over the substrate;
- a resistance element disposed over the first electrode;
- and
- a second electrode disposed over the resistance element;
- wherein the second electrode comprises an alloy of first metal and a second metal.
3 more elements
A memory cell comprising:
- a substrate;
- a first electrode disposed over the substrate;
- a matrix layer disposed over the first electrode, the matrix layer comprising solid electrolyte material;
- and
- a second electrode arranged on the matrix layer, the second electrode comprising an alloy comprising a first metal and a second metal, the second electrode being formed by depositing a first metal layer comprising the first metal, depositing a second metal layer comprising the second metal, and heating the first and second metals to form the alloy, the first metal layer comprising germanium and the second metal comprising at least one of copper and/or silver.
2 more elements
A method of manufacturing a memory cell, the method comprising:
- forming a first electrode layer on or above a substrate;
- forming a matrix layer on or above the first electrode layer;
- forming a first metal layer on or above the matrix layer, the first metal layer comprising a first metal;
- forming a second metal layer on or above the first metal layer, the second metal layer comprising a second metal;
- and
- heating the first and second metal layers, wherein heating comprises heating the first and second metal layers to a temperature at which an alloy comprising the first metal and the second metal forms.
3 more elements
A method of manufacturing a memory cell, comprising:
- forming a tungsten electrode on or above a silicon substrate;
- forming a matrix layer on or above the tungsten electrode, the matrix layer comprising a solid electrolyte material;
- forming a germanium layer over the matrix layer;
- forming a copper layer over the germanium layer;
- and
- heating the copper layer and the germanium layer to form an alloy comprising germanium and copper.
3 more elements
Dependencies are inferred from the claim text.