Semiconductor device and method for manufacturing the same
OwnerChiaki Kudo, Yoshihiro Satoinventors
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Abstract
A semiconductor device includes a MIS transistor having a gate electrode which is fully silicided with metal. The edge parts of the gate electrode are lower in height than the other part thereof. Sidewall spacers are formed to cover the side and top surfaces of the edge parts of the gate electrode.
Claims16
A semiconductor device comprising a first MIS transistor having a first gate electrode which is fully silicided with metal, wherein
- edge parts of the first gate electrode are lower in height than the other part thereof and
- first sidewall spacers are formed to cover side and top surfaces of the edge parts of the first gate electrode.
A semiconductor device comprising a first MIS transistor having a first gate electrode which is fully silicided with metal, the first MIS transistor including:
- a first gate insulating film formed on a semiconductor substrate;
- the first gate electrode formed on the first gate insulating film;
- and
- first sidewall spacers formed on the side surfaces of the first gate electrode, wherein
- the first gate electrode has a first part and a second part which is formed on the first part and has a width in the gate length direction smaller than that of the first part.
A method for manufacturing a semiconductor device including a first MIS transistor having a first gate electrode which is fully silicided with metal, the method comprising the steps of:
- (a) forming first sidewall spacers covering side and top surfaces of edge parts of a first silicon film pattern to be the first gate electrode;
- (b) forming a metallic film on the first silicon film pattern after the step (a);
- and
- (c) reacting the first silicon film pattern with the metallic film to cause full silicidation of the first silicon film pattern to form the first gate electrode after the step (b).
Dependencies are inferred from the claim text.