Nonvolatile semiconductor memory device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsHiroshi Akahori, Wakako Takeuchi
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Abstract
A nonvolatile semiconductor memory device includes an array of nonvolatile memory cell transistors, each of which is configured such that a tunnel insulation film, a floating gate electrode, a floating gate insulation film and a control gate electrode are stacked on a surface of a semiconductor substrate. A mean roughness of an interface between a polysilicon, of which the floating gate electrode is formed, and the floating gate insulation film is 1.5 nm or less.
Claims15
A nonvolatile semiconductor memory device comprising an array of nonvolatile memory cell transistors, each of which is configured such that a tunnel insulation film, a floating gate electrode, a floating gate insulation film and a control gate electrode are stacked on a surface of a semiconductor substrate,
- wherein a mean roughness of an interface between a polysilicon, of which the floating gate electrode is formed, and the floating gate insulation film is 1.5 nm or less.
A method of manufacturing a nonvolatile semiconductor memory device including an array of nonvolatile memory cell transistors, each of which is configured such that a tunnel insulation film, a floating gate electrode, a floating gate insulation film and a control gate electrode are stacked on a surface of a semiconductor substrate, the method comprising:
- subjecting a surface of a polysilicon, of which the floating gate electrode is formed, to a nitriding process at a time of manufacturing the nonvolatile semiconductor memory device, thereby setting a mean roughness of an interface between the polysilicon and the floating gate insulation film at 1.5 nm or less.
Dependencies are inferred from the claim text.