Semiconductor device and method for manufacturing the same
AssigneeFujitsu Limited
InventorWensheng Wang
Life of this patent
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Abstract
Ferroelectric capacitors (42) are formed over a semiconductor substrate (10), then, a barrier film (46) directly covering the ferroelectric capacitors (42) is formed. Thereafter, wirings (56a etc.) connected to the ferroelectric capacitors (42) are formed. Further, a barrier film (58) is formed at a position higher than the wirings (56a etc.). In forming the barrier film (46), a film stack is formed, the film stack including at least two kinds of diffusion preventive films (46a and 46b) having different components and preventing diffusion of hydrogen or water.
Claims19
A semiconductor device comprising:
- a ferroelectric capacitor formed over a semiconductor substrate;
- and
- a barrier film covering the ferroelectric capacitor,
- wherein the barrier film is a film stack whose lower layer is one kind of film selected from a group consisting of an aluminum oxide film, an aluminum nitride film, and an aluminum oxynitride film, and whose upper layer is one kind of film selected from a group consisting of a titanium oxide film, a tantalum oxide film, a zirconium oxide film, and a tantalum nitride film.
A semiconductor device comprising:
- a ferroelectric capacitor formed over a semiconductor substrate;
- and
- a barrier film formed over the ferroelectric capacitor,
- wherein the barrier film is a film stack whose lower layer is one kind of film selected from a group consisting of an aluminum oxide film, an aluminum nitride film, and an aluminum oxynitride film, and whose upper layer is one kind of film selected from a group consisting of a titanium oxide film, a tantalum oxide film, a zirconium oxide film, and a tantalum nitride film.
A semiconductor device comprising:
- a ferroelectric capacitor formed over a semiconductor substrate;
- a wiring connected to the ferroelectric capacitor;
- and
- a barrier film formed at a position higher than the wiring,
- wherein the barrier film is a film stack whose lower layer is one kind of film selected from a group consisting of an aluminum oxide film, an aluminum nitride film, and an aluminum oxynitride film, and whose upper layer is one kind of film selected from a group consisting of a titanium oxide film, a tantalum oxide film, a zirconium oxide film, and a tantalum nitride film.
A method for manufacturing a semiconductor device, comprising:
- forming a ferroelectric capacitor over a semiconductor substrate;
- forming a first barrier film directly covering the ferroelectric capacitor;
- forming a wiring connected to the ferroelectric capacitor;
- and
- forming a second barrier film over the wiring,
- wherein at least one of the forming the first barrier film and the forming the second barrier film comprises the step of forming a film stack including at least two kinds of diffusion preventive films having different components and preventing diffusion of one of hydrogen and water.
Dependencies are inferred from the claim text.