Semiconductor memory device and method of manufacturing the same

1:

• A semiconductor memory device comprising:
• a semiconductor substrate having a first region and a second region;
• a transistor placed in the first region of the semiconductor substrate;
• a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor;
• a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor;
• a hydrogen barrier film formed above the first ferroelectric capacitor and formed above the first insulating film in the first and second regions;
• a contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor;
• a dummy contact which penetrates completely through the hydrogen barrier film in the second region and which is in a floating state;
• and
• a gate insulating film of the transistor formed on the semiconductor substrate in the first and second regions,
• wherein the dummy contact reaches the gate insulating film.