Solid-state imaging device and method of manufacturing the same

A solid-state imaging device comprising:

• a semiconductor substrate;
• a pixel formation region in said substrate and including a pixel made of a photoelectric conversion element comprising a first conductive type impurity region and a second conductive type impurity region under said first conductive type impurity region;
• and
• an element isolation portion in said substrate and comprising an element isolation insulating layer and an impurity element isolation region,
• wherein,
• said element isolation insulating layer is positioned in a surface of said substrate,
• said impurity element isolation region is positioned under said element isolation insulating layer and within said substrate,
• said impurity element isolation region extends to a position deeper within said substrate than where said first conductive type impurity region is formed in said pixel formation region;
• and
• said photoelectric conversion element extends to a position under said element isolation insulating layer of said element isolation portion.