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US 2008/0073674 A1Published application
Thin Film Transistor Array Panel and Method for Manufacturing the Same
AssigneeSamsung Electronics Co., Ltd.
InventorsBeom-Seok Cho, Yang-Ho Bae, Je-Hun Lee, Chang-Oh Jeong
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Abstract
The present invention provides a TFT array panel and a manufacturing method of the same, which has signal lines including a lower layer of an Al containing metal and an upper layer of a molybdenum alloy (Mo-alloy) comprising molybdenum (Mo) and at least one of niobium (Nb), vanadium (V), and titanium (Ti). Accordingly, undercut, overhang, and mouse bites which may arise in an etching process, are prevented, and TFT array panels that have signal lines having low resistivity and good contact characteristics are provided.
Claims3
A thin film transistor array panel, comprising:
- an insulating substrate;
- a gate line formed on the insulating substrate and having a first layer of an aluminum (Al) containing metal and a second layer of a Mo-alloy comprising molybdenum (Mo) and at least one of niobium (Nb), vanadium (V), and titanium (Ti), the gate line having a gate electrode;
- a gate insulating layer formed on the gate line;
- a semiconductor formed on the gate insulating layer;
- a data line formed on the gate insulating layer and the semiconductor, the data line having a source electrode;
- a drain electrode formed on the gate insulating layer and the semiconductor, the drain electrode facing the source electrode with a predetermined gap;
- a passivation layer formed on the data line and the drain electrode, the passivation layer having a contact hole;
- and
- a pixel electrode formed on the passivation layer and connected to the drain electrode through the contact hole.
6 more elements
Dependencies are inferred from the claim text.