Structure and method for manufacturing high performance and low leakeage field effect transistor
AssigneeInternational Business Machines Corporation
InventorsHuilong Zhu, Kangguo Cheng
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Abstract
There is provided a field effect transistor (FET) including a source side semiconductor; a drain side semiconductor; and a gate. The source side semiconductor is made of a high mobility semiconductor material, and the drain side semiconductor is made of a low leakage semiconductor material. In one embodiment, the FET is a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). There is also provided a method for manufacturing the FET.
Claims20
A field effect transistor (FET), comprising:
- a source semiconductor having a first portion of a channel;
- a drain semiconductor having a second portion of said channel;
- and
- a gate,
- wherein said source semiconductor is made of a high mobility semiconductor material, and wherein said drain semiconductor is made of a low leakage semiconductor material.
A field effect transistor (FET), comprising:
- a gate having a channel;
- a source semiconductor made of a high mobility semiconductor material and forming a first portion of said channel;
- and
- a drain semiconductor made of a low leakage semiconductor material and forming a second portion of said channe.
The FET of claim 11, wherein said FET is selected from the group consisting of a Metal-Oxide-Semiconductor Field Effect Transistor, a Metal-insulator-Semiconductor Field Effect Transistor, and a combination thereof.
Dependencies are inferred from the claim text.