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US 2008/0073666 A1Published application
Power MOSFET integration
AssigneeO2Micro, Inc.
InventorJung Kao
Life of this patent
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Abstract
A method for integration is disclosed herein. The method includes forming an N-type double drain (NDD) layer, and fabricating at least one transistor from a controller circuitry and a transistor switch on a single chip. The controller circuitry is operable for controlling the transistor switch.
Claims22
A method for integration, comprising:
- forming an N-type double drain (NDD) layer;
- and
- fabricating at least one transistor from a controller circuitry and a transistor switch on a single chip,
- wherein said controller circuitry is operable for controlling said transistor switch.
1 more element
An integrated circuit (IC), comprising:
- a switch comprising an N-type double drain (NDD) layer;
- and
- a controller circuitry operable for controlling said switch.
A display system, comprising:
- a liquid crystal display (LCD) device;
- and
- an inverter for converting a DC voltage to an AC voltage, said inverter comprising:
- a switch comprising an N-type double drain (NDD) layer;
- and
- a controller circuitry operable for controlling said switch,
- wherein said controller circuitry and said switch are integrated on a single chip.
4 more elements
Dependencies are inferred from the claim text.