Semiconductor device and method of fabricating the same

A semiconductor device comprising:

• a substrate including a first region having a first thickness and a second region provided with a region of a front surface having concentrated dislocations at least on part of the front surface thereof while having a second thickness smaller than said first thickness;
• a semiconductor element layer formed on a first region of the front surface of said substrate other than said second region provided with said region of the front surface having said concentrated dislocations;
• a front electrode formed to be in contact with the front surface of said semiconductor element layer;
• and
• a back electrode of provided on a back surface of said substrate, wherein
• said semiconductor element layer includes:
• a first conductivity type first semiconductor layer,
• an active layer formed on said first semiconductor layer, and
• a second conductivity type second semiconductor layer formed on said active layer.