Films and structures for metal oxide semiconductor light emitting devices and methods
AssigneeMoxtronics, Inc.
InventorsYungryel Ryu, Tae-seok Lee, Henry White
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Abstract
Semiconductor films and structures, such as films and structures utilizing zinc oxide or other metal oxides, and processes for forming such films and structures, are provided for use in metal oxide semiconductor light emitting devices and other metal oxide semiconductor devices, such as ZnO based semiconductor devices.
Claims72
A p-n junction based semiconductor light emitting device, comprising:
- a substrate,
- a ZnO based buffer layer region formed on said substrate,
- a ZnO based layer region formed on said ZnO based buffer layer region,
- a ZnO based first cladding layer region formed on said ZnO based layer region,
- a ZnO based first barrier layer region formed on said first cladding layer region,
- a ZnO based active layer region formed on said first barrier layer region,
- a ZnO based second barrier layer region formed on said active layer region,
- a ZnO based second cladding layer region formed on said second barrier layer region, and
- a ZnO based topmost electrical contact layer region formed on said second cladding layer.
A p-n junction based semiconductor light emitting device, comprising:
- a substrate,
- a ZnO based buffer layer region formed on said substrate,
- a ZnO based layer region formed on said ZnO based buffer layer region,
- a ZnO based first cladding layer region formed on said ZnO based layer region,
- a ZnO based first barrier layer region formed on said first cladding layer region,
- a ZnO based active layer region formed on said first barrier layer region,
- a ZnO based second barrier layer region formed on said active layer region,
- a ZnO based second cladding layer region formed on said second barrier layer region, and
- a metallic reflector/electrical contact layer region formed on said second cladding layer region.
A p-n junction based semiconductor light emitting device, comprising:
- a substrate,
- a ZnO based buffer layer region formed on said substrate,
- a ZnO based layer region formed on said ZnO based buffer layer region,
- a ZnO based first cladding layer region formed on said ZnO based layer region,
- a ZnO based first barrier layer region formed on said first cladding layer region,
- a ZnO based active layer region formed on said first barrier layer region,
- a ZnO based second barrier layer region formed on said active layer region,
- a ZnO based second cladding layer region formed on said second barrier layer region,
- a topmost electrical contact layer region formed on said second cladding layer, and
- a metallic reflector/electrical contact layer region formed on exposed face of the substrate.
A p-n junction based semiconductor device operable as a vertical cavity surface emitting laser, comprising:
- a substrate,
- a ZnO based buffer layer region formed on said substrate,
- a ZnO based first Bragg reflector layer region formed on said ZnO buffer layer region,
- a ZnO based first cladding layer region formed on said first Bragg reflector layer region,
- a ZnO based first barrier layer region formed on said first cladding layer region,
- a ZnO based active layer region formed on said first barrier layer region,
- a ZnO based second barrier layer region formed on said active layer region,
- a ZnO based second cladding layer region formed on said second barrier layer region,
- a ZnO based second Bragg reflector layer region formed on said second cladding layer region, and
- a topmost electrical contact layer region formed on said second Bragg reflector layer.
A p-n junction based semiconductor device operable as an edge emitting laser, wherein a laser cavity is formed by two mirrored surfaces being located on opposing ends of a slab of layered semiconductor material comprising:
- a substrate,
- a ZnO based buffer layer region formed on said substrate,
- a ZnO based layer region formed on said ZnO based buffer layer region,
- a ZnO based first cladding layer region formed on said ZnO based layer region,
- a ZnO based first barrier layer region formed on said first cladding layer region,
- a ZnO based active layer region formed on said first barrier layer region,
- a ZnO based second barrier layer region formed on said active layer region,
- a ZnO based second cladding layer region formed on said second barrier layer region, and
- a topmost electrical contact layer region formed on said second cladding layer.
A p-n junction based semiconductor light emitting device, comprising:
- a substrate,
- a ZnO based layer region formed on the substrate,
- a ZnO based first cladding layer region formed on the ZnO based layer region,
- a ZnO based first barrier layer region formed on the first cladding layer region,
- a ZnO based active layer region formed on the first barrier layer region,
- a ZnO based second barrier layer region formed on the active layer region,
- a ZnO based second cladding layer region formed on the second barrier layer region, and
- one or more of the following:
- (1) a ZnO based topmost electrical contact layer region formed on the second cladding layer, or (2) a metallic reflector/electrical contact layer region formed on any of said second cladding layer region or an exposed face of the substrate.
A p-n junction based semiconductor device operable as a vertical cavity surface emitting laser, comprising:
- a substrate,
- a ZnO based first Bragg reflector layer region formed on the substrate,
- a ZnO based first cladding layer region formed on the first Bragg reflector layer region,
- a ZnO based first barrier layer region formed on the first cladding layer region,
- a ZnO based active layer region formed on the first barrier layer region,
- a ZnO based second barrier layer region formed on the active layer region,
- a ZnO based second cladding layer region formed on the second barrier layer region,
- a ZnO based second Bragg reflector layer region formed on the second cladding layer region, and
- a topmost electrical contact layer region formed on the second Bragg reflector layer.
A p-n junction based semiconductor device operable as an edge emitting laser, wherein a laser cavity is formed by two mirrored surfaces being located on opposing ends of a slab of layered semiconductor material, the device comprising:
- a substrate,
- a ZnO based layer region formed on the substrate,
- a ZnO based first cladding layer region formed on the ZnO based layer region,
- a ZnO based first barrier layer region formed on the first cladding layer region,
- a ZnO based active layer region formed on the first barrier layer region,
- a ZnO based second barrier layer region formed on the active layer region,
- a ZnO based second cladding layer region formed on the second barrier layer region, and
- a topmost electrical contact layer region formed on the second cladding layer.
A p-n junction based semiconductor light emitting device comprising a ZnO based active layer region, a p-type layer region, and an n-type layer region.
A p-n junction based semiconductor light emitting device comprising a ZnO based active layer region, a p-type layer region, and an n-type layer region, wherein the active layer region is located between a p-type region and an n-type region.
A p-n junction based semiconductor light emitting device comprising a ZnO based active layer region, a p-type layer region, and an n-type layer region, wherein the active layer region is located between a p-type region and an n-type region, and wherein the energy band gap of the active layer region is smaller than that of the n-type region and is smaller than that of the p-type region.
Dependencies are inferred from the claim text.