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AssigneeSamsung Electronics Co., Ltd.
InventorsBong-Jin Kuh, Yong-Ho Ha, Han-Bong Ko, Doo-Hwan Park, Hee-Ju Shin, Sang-Wook Lim
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A phase-change memory device includes a substrate having a contact region, an insulating interlayer on the substrate, a lower electrode electrically connected to the contact region, a phase-change material layer pattern formed on the lower electrode, and an upper electrode formed on the phase-change material layer pattern. The phase-change material layer pattern includes a chalcogenide compound doped with carbon and at least one of nitrogen and metal. The phase-change memory device may have a considerably reduced driving current without increasing a set resistance thereof. Further, the phase-change material layer pattern may have an increased crystallization temperature so as to ensure improved data retention characteristics of the phase-change memory device.
A phase-change material layer comprising a chalcogenide compound doped with carbon and nitrogen in accordance with the following chemical formula (1):
A phase-change material layer comprising a chalcogenide compound doped with carbon, nitrogen and metal in accordance with the following chemical formula (5):
A phase-change material layer comprising a chalcogenide compound doped with carbon and metal in accordance with the following chemical formula (9):
A phase-change memory device comprising:
A phase-change memory device comprising:
Dependencies are inferred from the claim text.