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US 2008/0073636 A1Published application
Nonvolatile Memory Device and Fabrication Method Thereof
AssigneeHynix Semiconductor Inc.
InventorTae Hoon Kim
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Abstract
A nonvolatile memory device and its fabrication method of the present invention may ensure a margin of the threshold drive voltage during a design process of the device by forming a resistance layer determining phase of ReRAM along an upper edge of a lower electrode, and improve operating characteristics of the device
Claims19
A nonvolatile memory device, comprising:
- a first electrode;
- a first resistance layer formed along an edge of the first electrode;
- a second resistance layer filled inside the first resistance layer;
- and
- a second electrode formed over the first and second resistance layers.
2 more elements
A fabrication method of a nonvolatile memory device, comprising:
- forming a first interlayer insulating film including a first electrode over a part of a semiconductor substrate;
- forming a second interlayer insulating film including a contact hole exposing the first electrode over a part of the first interlayer insulating film;
- forming a first resistance layer on sidewalls of the contact hole;
- forming a second resistance layer filling up an inside of the first resistance layer;
- forming a second electrode over the first and second resistance layers;
- and
- forming a third interlayer insulating film with a contact plug overlapping with the first electrode over a part of the second electrode.
4 more elements
Dependencies are inferred from the claim text.